features 1 of 8 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems sbw-5089(z) dcto8ghz cascadable ingap/gaas hbt mmic amplifier the sbw-5089(z) is a high performance ingap/gaas hbt mmic amplifier. a dar- lington circuit fabricated with ingap process technology provides broadband rf per- formance up to 8ghz and excellent thermal performance. the heterojunction increases breakdown voltage and minimi zes leakage current between junctions. cancellation of emitter junction non-linear ities results in high suppression of inter- modulation products. operation requires only a single positive voltage supply, 2 dc- blocking capacitors, a bias resistor and an rf choke. gain return loss versus frequency, i d =80ma (typ), tuned application circut 0 5 10 15 20 25 012345678 frequency (ghz ) gain (db) -25 -20 -15 -10 -5 0 return loss (db) gain orl irl ? available in rohs compliant and pb-free (z part number) ? 50 ? cascadable gain block ? wideband flat gain to 3ghz: +/-1.4db ? p 1db = 13.4 at 6ghz ? input / output vswr <2:3to8ghz ? patented thermal design ? single voltage supply operation applications ? wideband instrumentation ? fiber optic driver ? oc-48 ? basestation ? sat com ds091130 ? package: sot-89 sbw-5089(z) dcto8ghz cascadable ingap/gaas hbt mmic amplifier parameter specification unit condition min. typ. max. small signal gain, pc board and connector losses de-embedded 19.3 20.3 21.3 db 850mhz 17.0 18.0 19.0 db 3000mhz 17.2 db 4200 mhz 14.5 15.5 16.5 db 6000mhz output power at 1db compression 20.1 dbm 850mhz 18.4 19.4 dbm 1950mhz output third order intercept point 35.5 dbm 850mhz 32.0 34.0 dbm 1950mhz output power 13.0 dbm 1950mhz, -45dbc acp is-95 9 forward chan- nels (p out ) determined by return loss 6000 mhz >10db noise figure 3.9 4.4 db 1950mhz worst case input return loss 7.0 10.0 db dcto6000mhz worst case output return loss 8.0 10.0 db dcto6000mhz device operating voltage 4.5 4.9 5.3 v device operating current 72.0 80.0 88.0 ma thermal resistance 70 c/w junction to backside test conditions: v s =8v i d =80ma typ. oip 3 tone spacing=1mhz t l =25c bias resistance=39 ? p out per tone=0dbm z s =z l =50 ?
2 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z) typical performance at key operating frequencies absolute maximum ratings parameter rating unit max device current (l d )130ma max device voltage (v d )6v max rf input power 17 dbm max dissipated power 0.65 w max junction temperature (t j )150c operating temperature range (t l ) -40 to + 85 c max storage temperature 150 c esd rating - human body model 1c class moisture sensitivity level msl 2 parameter units 500mhz 850mhz 1950mhz 2400mhz 3500mhz 5800mhz small signal gain db 20.5 20.3 19.1 18.7 17.3 15.1 output third order intercept point dbm 36.5 35.5 34.0 33.0 30.5 25.5 output power at 1db compression dbm 20.2 20.1 19.4 19.4 17.5 13.4 input return loss db 26 26 19 15 12 12.5 output return loss db 19 17.5 12 11 10.5 10.9 reverse isolation db222323232323 noise figure db 3.6 3.6 3.9 3.9 4.1 4.3 test conditions: v s =8v, i d =80ma typ, oip 3 tone spacing=1mhz, p out per tone=0dbm. t l =25c, bias resistance=39 ? , z s =z l =50 ? . caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. ? p1db vs. frequency 5 8 11 14 17 20 23 26 0123456 frequency(ghz) p1db (dbm) -40 c +25 c +85 c oip3 vs. frequency 12 15 18 21 24 27 30 33 36 39 0123456 frequency (ghz) oip3 ( dbm) -40 c +25c +85c noise figure vs. frequency 0 1 2 3 4 5 6 0123456 frequency (ghz) nf (db) -40c +25c +85c
3 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z) rf performance with basic ap plication circuit (bias: i d =80ma typ.) note: full s-parameter data available at www.rfmd.com s 12 vs. frequency -30 -25 -20 -15 -10 012345678910 frequency (ghz) |s 12 | (db) -40c +25c +85c ? is-95 @ 850mhz adj. channel pwr. vs. channel output pwr. -70 -65 -60 -55 -50 -45 -40 -35 -30 6 8 10 12 14 16 dbm dbc -40c +25c +85c is-95 @ 1950mhz adj. channel pwr. vs. channel output power -70 -65 -60 -55 -50 -45 -40 -35 -30 6 8 10 12 14 16 dbm dbc -40c +25c +85c s 21 vs. frequency 0 5 10 15 20 25 012345678910 frequency (ghz) |s 21 | (db) -40c +25c +85c s 11 vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 012345678910 frequency (ghz) |s 11 | (db) -40c +25c +85c s 22 vs. frequency -40 -35 -30 -25 -20 -15 -10 -5 0 012345678910 frequency (ghz) |s 22 | (db) -40c +25c +85c
4 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z) typical rf performance with tune d application circuit (bias: i d =80ma typ.) s 21 vs. frequency 0 5 10 15 20 25 012345678910 frequency (ghz) |s 21 | (db) -40c +25c +85c s 11 vs. frequency -40 -30 -20 -10 0 012345678910 frequency (ghz) |s 11 | (db) -40c +25c +85c s 12 vs. frequency -30 -25 -20 -15 -10 012345678910 frequency (ghz) |s 12 | (db) -40c +25c +85c s 22 vs. frequency -40 -30 -20 -10 0 012345678910 frequency (ghz) |s 22 | (db) -40c +25c +85c
5 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z) application circuit schematic application circuit layout application circuit element values recommended bias resistance for i d =80ma reference designator 100mhz 500mhz 850mhz 1950mhz 2400mhz 3500mhz c b 1000pf 220pf 100pf 68pf 56pf 39pf c d 100pf 100pf 68pf 22pf 22pf 15pf l c 470nh 68 nh 33nh 22nh 18nh 15nh supply voltage (v s ) (volts) <7 7 7.5 8 9 10 12 bias resistance* ( ? ) n/r 26 33 39 52 64 89 rf i n rf out 1 uf c b c b c d v s r bi as l c 1 2 3 4 1000 pf sw-5089 r ld c bi as i nduct or v d i d
6 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z) suggested pad layout notes: 1. solder the copper pad on the backside of the device package to the ground plane. 2. provide a large ground pad area under device pins 1, 2, 4, and 5 with many plated via holes as shown. 3. dimensions given for 50 ? i/o lines are for 31mil thick getek. scale accord ingly for different board thicknesses and dielec- tric contacts. 4. we recommend 1 or 2 ounce copper. measurements for this data sheet were made on a 31mil thick getek with 1 ounce copper on both sides. *bias resistance=r bias + r ldc =(v s -v d )/i d select r bias so that r bias + r ldc ~the recommended bias resistance. use 1% or 5% tolerance resistors or parallel combinations to attain the recom- mended bias resistance 3%. r bias provides current stability over temperature. *n/r=not recommended. contact rfmd technical support for guidance when available supply voltage is <7v. pin function description 1rf in rf input pin. this pin requires the use of an external dc-blocking capacitor chosen for the frequency of opera- tion. 2, 4 gnd connection to ground. provide via holes as close to the device ground leads as possible to reduce ground induc- tance and achieve rf performance. 3rf out/dc bias rf output and bias pin. this pin requires the use of an external dc-blocking capacitor chosen for the frequency of operation. pcb pad layout dimensions in inches [millimeters]
7 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z) package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. part identification marking alternate marking ?sbw5089? or ?sbw5089z? on line one with trace code on line two. ordering information part number description reel size devices/reel sbw-5089 tin-lead 7? 1000 sbw-5089z lead free, rohs compliant 7? 1000 bw5 1 2 3 123 4 bw5z 1 2 3 123 4
8 of 8 ds091130 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sbw-5089(z)
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